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| STGP12NB60KD - STGB12NB60KD N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESHTM IGBT TYPE STGP12NB60KD STGB12NB60KD s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25C IC(#) @ 100C < 2.8 V < 2.8 V 18 A 18 A HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 10 MICROS CO-PACKAGED ANTIPARALLEL DIODE 3 1 2 3 1 TO-220 D2PAK s DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS s UPS INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STGP12NB60KD STGB12NB60KDT4 MARKING GP12NB60KD GB12NB60KD PACKAGE TO-220 D2PAK PACKAGING TUBE TAPE & REEL December 2003 1/11 STGP12NB60KD - STGB12NB60KD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 30 18 60 10 125 1.0 -65 to 150 150 Unit V V V A A A s W W/C C C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.0 62.5 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 50 100 100 Typ. Max. Unit V A A nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A VGE = 15V, IC = 12 A VGE = 15V, IC = 12 A, Tj =125C Test Conditions VCE = 25 V , IC = 12 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Min. 5 2.2 1.7 Typ. Max. 7 2.8 Unit V V V DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Twsc Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Short Circuit WITHSTAND Time Typ. 5 890 110 22 54 8 31 48 10 Max. Unit S pF pF pF nC nC nC A s VCE = 480V, IC = 12 A, VGE = 15V Vclamp = 480 V , VGE =15V, Tj = 125C , RG = 10 VCE = 0.5 BVces , VGE = 15 V Tj = 125C , RG = 10 2/11 STGP12NB60KD - STGB12NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 12 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 12 A RG=10 VGE = 15 V,Tj = 125C Min. Typ. 25 14.5 590 180 Max. Unit ns ns A/s J SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 12 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 12 A, RGE = 10 , VGE = 15 V Min. Typ. 130 25 96 100 258 410 310 80 150 220 650 830 Max. Unit ns ns ns ns J J ns ns ns ns J J Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 6 A If = 6 A, Tj = 125 C If = 6 A ,VR = 50 V, Tj =125C, di/dt = 100 A/s 1.3 1.1 80 240 5.5 Test Conditions Min. Typ. Max. 12 48 1.9 Unit A A V V ns nC A (#) Calculated according to the iterative formula: T JMAX - T C IC ( T C ) = ------------------------------------------------------------------------------------R THJ - C x V CESAT ( MAX )(T C, I C) 3/11 STGP12NB60KD - STGB12NB60KD Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current 4/11 STGP12NB60KD - STGB12NB60KD Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature 5/11 STGP12NB60KD - STGB12NB60KD Total Switching Losses vs Collector Current Diode Forward Voltage Turn-Off SOA Thermal Impedance 6/11 STGP12NB60KD - STGB12NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/11 STGP12NB60KD - STGB12NB60KD TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 8/11 STGP12NB60KD - STGB12NB60KD D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 9/11 1 STGP12NB60KD - STGB12NB60KD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 10/11 STGP12NB60KD - STGB12NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 11/11 |
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